NANOSHEET WITH CHANGING SiGe PECENTAGE FOR SiGe LATERAL RECESS

ABSTRACT

A method for manufacturing a semiconductor device includes forming a stacked configuration of a plurality of silicon germanium layers and a plurality of silicon layers on a semiconductor substrate, wherein the stacked configuration comprises a repeating arrangement of a silicon layer stacked on a silicon germanium layer, patterning the stacked configuration into a plurality of patterned stacks spaced apart from each other, and etching exposed sides of the plurality of silicon germanium layers to remove portions of the silicon germanium layers from lateral sides of each of the plurality of silicon germanium layers, wherein a concentration of germanium is varied between each of the plurality of silicon germanium layers to compensate for variations in etching rates between the plurality of silicon germanium layers to result in remaining portions of each of the plurality of silicon germanium layers having the same or substantially the same width as each other.

BACKGROUND

Nanowires and nanosheets are relatively thin wires or sheets, forexample, with dimensions measured in nanometers (nm). Nanowires arecircular or square shaped or approximately circular or square shaped incross-section and have diameters or widths such as, for example, lessthan about 5 nm or 10 nm. A nanowire typically has a width that is equalor substantially equal to its height. Nanosheets are elliptical orrectangular shaped, or approximately elliptical or rectangular shaped incross section and have thicknesses or heights such as, for example, lessthan about 5 nm or 10 nm. The width of a nanosheet may be considerablylarger than this height, such as about 20 nm to about 60 nm in the caseof a nanosheet which is about 4 nm to about 8 nm in height. Thethickness of a nanosheet layer, or height of the rectangle in crosssection, affects the electrostatics of the nanosheet.

Nanowire and nanosheet devices can be viable device options instead offin field-effect transistors (FinFETs). For example, nanowires ornanosheets can be used as the fin structure in a dual-gate, tri-gate orgate-all-around (GAA) FET device. Complementary metal-oxidesemiconductor (CMOS) scaling can be enabled by the use of stackednanowires and nanosheets, which offer superior electrostatics and highercurrent density per footprint area than FinFETs. Manufacturing ofnanowire or nanosheet devices may include lateral recessing of certainsemiconductor layers in a nanowire or nanosheet stack, which may beperformed by etching. However, when the gate pitch becomes small, theloading effect becomes strong, which leads to different etch ratesbetween upper and lower semiconductor layers. This causes uneven gatelengths between upper and lower portions of a resulting device havingstacked gate regions.

SUMMARY

According to an exemplary embodiment of the present invention, a methodfor manufacturing a semiconductor device includes forming a stackedconfiguration of a plurality of silicon germanium layers and a pluralityof silicon layers on a semiconductor substrate, wherein the stackedconfiguration comprises a repeating arrangement of a silicon layerstacked on a silicon germanium layer, and a concentration of germaniumis varied between each of the plurality of silicon germanium layers. Themethod further includes patterning the stacked configuration into aplurality of patterned stacks spaced apart from each other, etchingexposed sides of the plurality of silicon germanium layers to removeportions of the silicon germanium layers from lateral sides of each ofthe plurality of silicon germanium layers, wherein remaining portions ofeach of the plurality of silicon germanium layers have the same orsubstantially the same width as each other, selectively removing theremaining portions of each of the plurality of silicon germanium layersfrom the plurality of patterned stacks, and replacing the removedremaining portions of each of the plurality of silicon germanium layerswith respective gate structures.

According to an exemplary embodiment of the present invention, asemiconductor device includes a plurality of stacked semiconductorstructures spaced apart from each other on a semiconductor substrate,wherein each of the plurality of stacked semiconductor structurescomprises a stacked configuration of a plurality of gate structures anda plurality of silicon layers on the semiconductor substrate, whereinthe stacked configuration comprises a repeating arrangement of a siliconlayer stacked on a gate structure. The semiconductor device alsoincludes a plurality of epitaxial source/drain regions between theplurality of stacked semiconductor structures, wherein the epitaxialsource/drain regions extend from sides of the plurality of siliconlayers. Each of the plurality of gate structures has the same orsubstantially the same width as each other.

According to an exemplary embodiment of the present invention, a methodfor manufacturing a semiconductor device includes forming a stackedconfiguration of a plurality of silicon germanium layers and a pluralityof silicon layers on a semiconductor substrate, wherein the stackedconfiguration comprises a repeating arrangement of a silicon layerstacked on a silicon germanium layer, patterning the stackedconfiguration into a plurality of patterned stacks spaced apart fromeach other, etching exposed sides of the plurality of silicon germaniumlayers to remove portions of the silicon germanium layers from lateralsides of each of the plurality of silicon germanium layers, wherein aconcentration of germanium is varied between each of the plurality ofsilicon germanium layers to compensate for variations in etching ratesbetween the plurality of silicon germanium layers to result in remainingportions of each of the plurality of silicon germanium layers having thesame or substantially the same width as each other, and replacing theremaining portions of each of the plurality of silicon germanium layerswith respective gate structures having the same or substantially thesame width as each other.

These and other exemplary embodiments of the invention will be describedin or become apparent from the following detailed description ofexemplary embodiments, which is to be read in connection with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments of the present invention will be described belowin more detail, with reference to the accompanying drawings, of which:

FIGS. 1A and 1B are schematic cross-sectional views illustratingmanufacturing of a transistor device and showing formation of a stackedstructure of silicon (Si) and silicon germanium (SiGe) nanosheet ornanowire layers on a semiconductor substrate, according to an embodimentof the invention.

FIGS. 2 and 3 are schematic cross-sectional views illustratingmanufacturing of a transistor device and showing formation of dummygates, according to an embodiment of the invention.

FIG. 4 is a schematic cross-sectional view illustrating manufacturing ofa transistor device and showing spacer deposition on dummy gates,according to an embodiment of the invention.

FIG. 5 is a schematic cross-sectional view illustrating manufacturing ofa transistor device and showing removal of portions of the spacer layerand patterning of the stacked nanosheet or nanowire layers, according toan embodiment of the invention.

FIG. 6 is a schematic cross-sectional view illustrating manufacturing ofa transistor device and showing recessing of silicon germanium portionsof the patterned stacks, according to an embodiment of the invention.

FIG. 7 is a schematic cross-sectional view illustrating manufacturing ofa transistor device and showing deposition of a liner layer, accordingto an embodiment of the invention.

FIG. 8 is a schematic cross-sectional view illustrating manufacturing ofa transistor device and showing formation of inner spacers to cover SiGeportions of the patterned stacks, according to an embodiment of theinvention.

FIG. 9 is a schematic cross-sectional view illustrating manufacturing ofa transistor device and showing formation of source/drain epitaxiallayers and inter layer dielectric (ILD) layer deposition, according toan embodiment of the invention.

FIG. 10 is a schematic cross-sectional view illustrating manufacturingof a transistor device and showing formation of gate structures in placeof removed dummy gates, according to an embodiment of the invention.

DETAILED DESCRIPTION

Exemplary embodiments of the invention will now be discussed in furtherdetail with regard to semiconductor devices and methods of manufacturingsame and, in particular, to fabrication of both shared and non-sharedgate structures.

It is to be understood that the various layers and/or regions shown inthe accompanying drawings are not drawn to scale, and that one or morelayers and/or regions of a type commonly used in, for example,complementary metal-oxide semiconductor (CMOS), field-effect transistor(FET), nanowire FET, nanosheet FET, fin field-effect transistor(FinFET), metal-oxide-semiconductor field-effect transistor (MOSFET)and/or other semiconductor devices may not be explicitly shown in agiven drawing. This does not imply that the layers and/or regions notexplicitly shown are omitted from the actual devices. In addition,certain elements may be left out of particular views for the sake ofclarity and/or simplicity when explanations are not necessarily focusedon the omitted elements. Moreover, the same or similar reference numbersused throughout the drawings are used to denote the same or similarfeatures, elements, or structures, and thus, a detailed explanation ofthe same or similar features, elements, or structures will not berepeated for each of the drawings.

The semiconductor devices and methods for forming same in accordancewith embodiments of the present invention can be employed inapplications, hardware, and/or electronic systems. Suitable hardware andsystems for implementing embodiments of the invention may include, butare not limited to, personal computers, communication networks,electronic commerce systems, portable communications devices (e.g., celland smart phones), solid-state media storage devices, functionalcircuitry, etc. Systems and hardware incorporating the semiconductordevices are contemplated embodiments of the invention. Given theteachings of embodiments of the invention provided herein, one ofordinary skill in the art will be able to contemplate otherimplementations and applications of embodiments of the invention.

The embodiments of the present invention can be used in connection withsemiconductor devices that may require, for example, FETs, CMOSs,MOSFETs, nanowire FETs, nanosheet FETs and/or FinFETs. By way ofnon-limiting example, the semiconductor devices can include, but are notlimited to FET, CMOS, MOSFET, nanowire FET, nanosheet FET and FinFETdevices, and/or semiconductor devices that use FET, CMOS, MOSFET,nanowire FET, nanosheet FET and/or FinFET technology.

As used herein, “height” refers to a vertical size of an element (e.g.,a layer, trench, hole, opening, etc.) in the cross-sectional viewsmeasured from a bottom surface to a top surface of the element, and/ormeasured with respect to a surface on which the element is located.Conversely, a “depth” refers to a vertical size of an element (e.g., alayer, trench, hole, opening, etc.) in the cross-sectional viewsmeasured from a top surface to a bottom surface of the element.

As used herein, “lateral,” “lateral side,” “lateral surface” refers to aside surface of an element (e.g., a layer, opening, etc.), such as aleft or right side surface in the drawings.

As used herein, “width” or “length” refers to a size of an element(e.g., a layer, trench, hole, opening, etc.) in the drawings measuredfrom a side surface to an opposite surface of the element.

As used herein, terms such as “upper”, “lower”, “right”, “left”,“vertical”, “horizontal”, “top”, “bottom”, and derivatives thereof shallrelate to the disclosed structures and methods, as oriented in thedrawing figures. For example, as used herein, “vertical” refers to adirection perpendicular to the top surface of the substrate in thecross-sectional views, and “horizontal” refers to a direction parallelto the top surface of the substrate in the cross-sectional views.

As used herein, unless otherwise specified, terms such as “on”,“overlying”, “atop”, “on top”, “positioned on” or “positioned atop” meanthat a first element is present on a second element, wherein interveningelements may be present between the first element and the secondelement. As used herein, unless otherwise specified, the term “directly”used in connection with the terms “on”, “overlying”, “atop”, “on top”,“positioned on” or “positioned atop” or the term “direct contact” meanthat a first element and a second element are connected without anyintervening elements, such as, for example, intermediary conducting,insulating or semiconductor layers, present between the first elementand the second element.

Embodiments of the present invention relate to methods and structures tocompensate for different lateral etch rates between upper and lowerstacked semiconductor layers caused by smaller gate pitches andresulting strong loading effect. For example, due to loading effect,upper silicon germanium (SiGe) nanosheet or nanowire layers in a stackedstructure with other semiconductor layers (e.g., silicon (Si) nanosheetor nanowire layers) are laterally etched at a faster rate than lowerSiGe layers in the stacked structure. The varied etch rate causes moreSiGe to be laterally etched in the upper portions of the stackedstructure so that the resulting upper SiGe layers are narrower than thelower SiGe layers. In accordance with an embodiment of the presentinvention, a concentration (e.g., percentage) of germanium (Ge) in SiGenanosheet or nanowire layers is varied between upper and lower portionsof nanosheet or nanowire stacks. The percentage of Ge affects the etchrate of the SiGe, whereby a higher percentage of Ge in SiGe layerresults in a faster etch rate. In order to compensate for the differentlateral etch rates between upper and lower stacked SiGe layers, thepercentage of Ge is increased in the lower SiGe as compared to the upperSiGe layers so that the same or substantially the same amount of SiGefrom each layer is removed during etching to result in the SiGe layershaving the same or substantially the same width after etching iscompleted.

Embodiments of the present invention can use hot hydrochloric acid (HCl)as an etchant, where higher Ge percentage SiGe has a higher etch ratethan lower Ge percentage SiGe. In order to compensate for the loadingeffect, the SiGe nanosheets or nanowires have a changing Ge percentagefrom top to bottom, instead of using constant Ge percentage SiGe layers.

FIGS. 1A and 1B are schematic cross-sectional views illustratingmanufacturing of a transistor device and showing formation of a stackedstructure of silicon (Si) and silicon germanium (SiGe) nanosheet ornanowire layers on a semiconductor substrate, according to an embodimentof the invention. Referring to FIGS. 1A and 1B, which are respectivelycross gate and cross fin views, a semiconductor substrate 102 comprisessemiconductor material including, but not limited to, silicon (Si),silicon germanium (SiGe), silicon carbide (SiC), silicon germaniumcarbide (SiGeC), III-V, II-V compound semiconductor or other likesemiconductor. In addition, multiple layers of the semiconductormaterials can be used as the semiconductor material of the substrate.

In accordance with an embodiment of the present invention, the substrate102 comprises a bulk silicon substrate. Layers of silicon germanium 107a, 107 b, 107 c and 107 d and silicon 105 a, 105 b and 105 c areepitaxially grown in an alternating and stacked configuration on thesubstrate 102, so that a first SiGe layer 107 a is followed a first Silayer 105 a on the first SiGe layer 107 a, which is followed by a secondSiGe layer 107 b on the first Si layer 105 a, and so on. While three Silayers 105 a-c and four SiGe layers 107 a-d are shown, the embodimentsof the present invention are not necessarily limited to the shown numberof layers 105, 107, and there may be more or less layers in the samealternating configuration depending on design constraints.

Referring to FIGS. 1A and 1B, in a non-limiting illustrative embodiment,a first SiGe layer 107 a of a SiGe/Si nanosheet stack is formed on thesubstrate 102 by epitaxial growth. In accordance with an embodiment ofthe present invention, the layers 107 a-d include, for example,germanium at concentrations of a4, a3, a2 and a1, respectively, wherea4>a3>a2>a1. For example, according to an embodiment, a4 may be in arange of about 25% Ge to about 45% Ge, a3 may be in a range of about 20%Ge to about 40% Ge, a2 may be in a range of about 15% Ge to about 35%Ge, and a1 may be in a range of about 10% Ge to about 30% Ge, but arenot necessarily limited thereto. Other concentrations of Ge can also beused to obtain the same or substantially the same width after etching iscompleted. Factors affecting the concentrations may include, forexample, the height and/or number of the layers, etchant used, andselectivity requirements between SiGe and Si nanosheets. In anon-limiting illustrative embodiment, a height of the layers 107 a, 107b and 107 d can be in the range of about 5 nm to about 15 nm dependingon the application of the device.

In a non-limiting illustrative embodiment, a first silicon layer 105 aof the SiGe/Si nanosheet stack is formed on the first SiGe layer 107 aby epitaxial growth. In accordance with an embodiment of the presentinvention, the layers 105 a-105 c include the same or a similarcomposition to the substrate 102. In a non-limiting example, a height ofthe layers 105 a-105 c can be in the range of about 5 nm to about 15 nmdepending on the desired process and application.

Additional SiGe and silicon layers 107 b-d, 105 b-c in a stackedconfiguration to form the remaining SiGe and silicon layers are formedon the first (lower) silicon layer 105 a by epitaxial growth. Inaccordance with an embodiment of the present invention, each of thelayers 105 a-c has the same or substantially the same composition andsize as each other, and each of the layers 107 a-d has the same orsubstantially the same size and different compositions (i.e., percentageof Ge).

The terms “epitaxial growth and/or deposition” and “epitaxially formedand/or grown,” mean the growth of a semiconductor material (crystallinematerial) on a deposition surface of another semiconductor material(crystalline material), in which the semiconductor material being grown(crystalline over layer) has substantially the same crystallinecharacteristics as the semiconductor material of the deposition surface(seed material). In an epitaxial deposition process, the chemicalreactants provided by the source gases are controlled, and the systemparameters are set so that the depositing atoms arrive at the depositionsurface of the semiconductor substrate with sufficient energy to moveabout on the surface such that the depositing atoms orient themselves tothe crystal arrangement of the atoms of the deposition surface.Therefore, an epitaxially grown semiconductor material has substantiallythe same crystalline characteristics as the deposition surface on whichthe epitaxially grown material is formed.

The epitaxial deposition process may employ the deposition chamber of achemical vapor deposition type apparatus, such as a PECVD apparatus. Anumber of different sources may be used for the epitaxial deposition ofthe in situ doped semiconductor material. In some embodiments, the gassource for the deposition of an epitaxially formed in situ dopedsemiconductor material may include silicon (Si) deposited from silane,disilane, trisilane, tetrasilane, hexachlorodisilane, tetrachlorosilane,dichlorosilane, trichlorosilane, ldisilane and combinations thereof. Inother examples, when the in situ doped semiconductor material includesgermanium, a germanium gas source may be selected from the groupconsisting of germane, digermane, halogermane, dichlorogermane,trichlorogermane, tetrachlorogermane and combinations thereof. Thetemperature for epitaxial silicon germanium deposition typically rangesfrom 450° C. to 900° C. Although higher temperature typically results infaster deposition, the faster deposition may result in crystal defectsand film cracking. By “in-situ” it is meant that the dopant thatdictates the conductivity type of the doped layer is introduced duringthe process step, e.g., epitaxial deposition, that forms the dopedlayer.

FIGS. 2 and 3 are schematic cross-sectional views illustratingmanufacturing of a transistor device and showing formation of dummygates, according to an embodiment of the invention. Referring to FIGS. 2and 3, a dummy gate layer 110, including, but not necessarily limitedto, polysilicon, amorphous silicon, or a dielectric material such as,for example, oxide or silicon nitride, is deposited on and around thestacked configuration of Si and SiGe using deposition techniques suchas, for example, chemical vapor deposition (CVD), plasma enhanced CVD(PECVD), radio-frequency CVD (RFCVD), physical vapor deposition (PVD),atomic layer deposition (ALD), molecular beam deposition (MBD), pulsedlaser deposition (PLD), and/or liquid source misted chemical deposition(LSMCD), sputtering, and/or plating. A hard mask layer 120 is formed ontop of the dummy gate layer 110 by one or more of the depositiontechniques noted in connection with deposition of the dummy gate layer110. The hard mask material can comprise for example, silicon oxide,silicon nitride, silicon oxynitride, boron nitride, silicon boronnitride, or multilayered stacks thereof. The hard mask and dummy gatelayers 120 and 110 are planarized by a planarization process, such as,chemical mechanical polishing (CMP), and lithography and etching stepsto remove excess dummy gate and hard mask material, and pattern thedeposited layers into dummy gates 110′ and hard masks 120′ in what is tobecome device channel regions.

In accordance with an embodiment of the present invention, prior toforming the dummy gate layer 110, a relatively thin liner layer 108 isdeposited on the stacked configuration of Si and SiGe using one or moreof the deposition techniques noted in connection with deposition of thedummy gate layer 110. The liner layer can comprise, for example, silicondioxide (SiO₂) or silicon oxynitride (SiON), and has a height of about 2nm to about 8 nm. The liner layer 108 functions as an etch stop layerduring dummy gate formation.

FIG. 4 is a schematic cross-sectional view illustrating manufacturing ofa transistor device and showing spacer deposition on dummy gates,according to an embodiment of the invention. Referring to FIG. 4,according to an embodiment, a dielectric spacer layer 130, such as, forexample, silicon oxide, silicon nitride, silicon oxynitride, boronnitride, silicon boron nitride, or multilayered stacks thereof, isdeposited conformally on the nanosheet or nanowire SiGe/Si stack, aswell on sidewalls of the dummy gates 110′ and hardmask layers 120′, andon a top surface of the hardmask layers 120. Deposition of the spacermaterial 130 can be performed using one or more conformal depositiontechniques including, but not necessarily limited to, CVD or ALD.

FIG. 5 is a schematic cross-sectional view illustrating manufacturing ofa transistor device and showing removal of portions of the spacer layerand patterning of the stacked nanosheet or nanowire layers, according toan embodiment of the invention. Referring to FIG. 5, the horizontalportions of the dielectric material 130 are removed, using, for example,etching, to form spacers 130′. Then, exposed portions of the stackednanosheet or nanowire layers, which are not under the spacer, hardmaskand dummy gate layers 130′, 120′ and 110′, are removed using, forexample, an etching process, such as reactive ion etching (ME). As canbe seen in FIG. 5, the spacer layers 130′ on the sidewalls of the dummygates 110′ and the hardmask layers 120′, and portions of the stackednanosheets or nanowires under the spacer layers 130′ and under the dummygates 110′ remain after the etching process, and portions of the stackednanosheets or nanowires in areas that will correspond source/drainregions are removed.

FIG. 6 is a schematic cross-sectional view illustrating manufacturing ofa transistor device and showing recessing of silicon germanium (SiGe)portions of the patterned stacks, according to an embodiment of theinvention. Referring to FIG. 6, lateral (e.g., side) portions of theSiGe layers 107 a-107 d are removed to create vacant areas 125 whichwill be eventually replaced with spacers 135′ as discussed furtherherein in connection with FIGS. 7 and 8, so that the SiGe layers 107a-107 d are covered during the epitaxial growth of the source/drainlayers 140 and lateral epitaxial growth does not occur from the SiGelayers 107 a-107 d of the patterned stacks.

According to an embodiment, the side portions of the layers 107 a-d arelaterally etched using hot HCl. A temperature range at which etchingwith hot HCl is performed is about 400° C. to about 700° C. Since the Geconcentration in the SiGe layers 107 a-107 d is increased from layer 107d to 107 a, the etch rates of the SiGe layers 107 a-107 d is the same orsubstantially the same to result in etched SiGe layers 107 a-d havingthe same or substantially the same width in the left-right direction.Accordingly, the amounts of SiGe removed to result in the vacant areas125 is the same or substantially the same in each of the SiGe layers 107a-d due to the varying percentage of Ge in layers 107 a-107 d, whichcompensates for the varied etch rates from the top to the bottom of thestacks caused by loading effect, as discussed herein above. As usedherein “substantially the same” can refer to a difference of ±2 nm.

Other etchants can be used, including, but not necessarily limited tohot SC1 (NH₄OH:H₂O₂:H₂O) solution. The etching of the layers 107 a-107 dis performed selective to layers 105 a-105 c, 108, 120′ and 130′.

FIG. 7 is a schematic cross-sectional view illustrating manufacturing ofa transistor device and showing deposition of a liner spacer layer,according to an embodiment of the invention. Referring to FIG. 7, aliner layer 135 is conformally deposited on the substrate 102, on sidesof the SiGe/Si stacks, including in the vacant areas 125, on sides ofthe spacers 130′ and on top of the spacers and hard masks 120′.Deposition of the liner spacer layer 135 can be performed using one ormore conformal deposition techniques including, but not necessarilylimited to, CVD or ALD. The spacer liner layer 135 includes adielectric, such as, for example, silicon oxide, silicon nitride,silicon oxynitride, boron nitride, silicon boron nitride, ormultilayered stacks thereof.

FIG. 8 is a schematic cross-sectional view illustrating manufacturing ofa transistor device and showing formation of inner spacers to cover SiGeportions of the patterned stacks, according to an embodiment of theinvention. Referring to FIG. 8, portions of the spacer liner layer 135not covered by the spacers 130′ and/or Si layers 105 a-c, are removedusing, for example, isotropic etching to form inner spacers 135′covering the SiGe 107 a-107 d portions of the patterned stacks. Inaccordance with an embodiment of the present invention, the vacantportions 125 left by removal of the side portions of the layers 107a-107 d are filled in by the inner spacers 135′. The isotropic etchingprocess can include, but is not necessarily limited to, a wet etchprocess using, for example, diluted high temperature phosphoric acid andhydrofluoric (HF) acid, or a dry etch process, such as isotropic CF₄ orSF₆ to remove excess portions of the spacer liner layer 135.

The inner spacers 135′ cover the SiGe layers 107 a-107 d during theepitaxial growth of the source/drain layers 140 and lateral epitaxialgrowth does not occur from the SiGe layers 107 a-107 d of the patternedstacks.

FIG. 9 is a schematic cross-sectional view illustrating manufacturing ofa transistor device and showing formation of source/drain epitaxiallayers and inter layer dielectric (ILD) layer deposition, according toan embodiment of the invention. Referring to FIG. 9, epitaxialsource/drain layers 140 are laterally grown from the exposed siliconregions 105 a-105 c of the patterned Si/SiGe stacks. The epitaxialsource/drain layers 140 become the source/drain regions for transistordevices, such as, for example, NFETs or PFETs, and can comprise in-situphosphorous doped (ISPD) Si:C for n-type devices, or in-situ boron doped(ISBD) SiGe for p-type devices, at concentrations of about 1E19/cm³ toabout 1E21/cm³.

An ILD layer 150, including, but not necessarily limited to, silicondioxide (SiO₂), low-temperature oxide (LTO), high-temperature oxide(HTO), field oxide (FOX) or some other dielectric are deposited on thesubstrate 102 to fill in areas around the epitaxial source/drain layers140 and in remaining spaces between the patterned SiGe/Si stacks and thedummy gate and hardmask layers 110′, 120′. The ILD layer 150 can bedeposited using, for example, CVD, PECVD, RFCVD, PVD, ALD, MLD, MBD,PLD, LSMCD, and/or sputtering, followed by planarization by, forexample, CMP, down to the hardmasks 120′.

FIG. 10 is a schematic cross-sectional view illustrating manufacturingof a transistor device and showing formation of gate structures in placeof removed dummy gates, according to an embodiment of the invention.Referring to FIG. 10, the hardmask layers 120′, dummy gates 110′ andSiGe layers 107 a-107 d are selectively removed. Then, the siliconnanosheets or nanowires 105 a-105 c are suspended, and gate structures160 are formed in place of the removed hardmask layers 120′, dummy gates110′ and SiGe layers 107 a-107 d.

In accordance with an embodiment of the present invention, the gatestructures include a gate dielectric layer such as, for example, ahigh-K dielectric layer 162 including, but not necessarily limited to,HfO₂ (hafnium oxide), ZrO₂ (zirconium dioxide), hafnium zirconium oxide,Al₂O₃ (aluminum oxide), and Ta₂O₅ (tantalum pentoxide) or otherelectronic grade (EG) oxide. Examples of high-k materials also include,but are not limited to, metal oxides such as hafnium silicon oxynitride,lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconiumsilicon oxide, zirconium silicon oxynitride, tantalum oxide, titaniumoxide, barium strontium titanium oxide, barium titanium oxide, strontiumtitanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalumoxide, and lead zinc niobate. According to an embodiment, the gatestructures include a work-function metal (WFM) layer 164, including butnot necessarily limited to, for a PFET, titanium nitride (TiN), tantalumnitride (TaN) or ruthenium (Ru), and for an NFET, TiN, titanium aluminumnitride (TiAlN), titanium aluminum carbon nitride (TiAlCN), titaniumaluminum carbide (TiAlC), tantalum aluminum carbide (TaAlC), tantalumaluminum carbon nitride (TaAlCN) or lanthanum (La) doped TiN, TaN, whichcan be deposited on the gate dielectric layer 162. The gate structuresfurther include a gate layer 160 including, but not necessarily limitedto, metals, such as, for example, tungsten, cobalt, zirconium, tantalum,titanium, aluminum, ruthenium, copper, metal carbides, metal nitrides,transition metal aluminides, tantalum carbide, titanium carbide,tantalum magnesium carbide, or combinations thereof deposited on the WFMlayer 162 and the gate dielectric layer 164.

The layers for the gate structures can be deposited using, for example,CVD, PECVD, RFCVD, PVD, ALD, MLD, MBD, PLD, LSMCD, and/or sputtering,followed by planarization by, for example, CMP.

According to an embodiment of the invention, source/drain contacts canbe formed by etching contact area trenches through the ILD layer 150 tothe source/drain region 140. The trenches are filled with a contactmaterial, such as, for example, electrically conductive materialincluding, but not necessarily limited to, tungsten, cobalt, zirconium,tantalum, titanium, aluminum, ruthenium, and/or copper. Asilicide/germanide layer may be formed in the trenches before filling aremaining portion of the trenches with the electrically conductivematerial to form the contact regions/areas. The silicide/germanide layermay be formed in the trenches by, for example, silicidation (e.g.,formation of an alloy including a portion of a contact material with anexposed underlying or side portions of a silicon or germanium layer),before filling the trenches with a remainder of electrically conductivematerial. Excess materials from the contact areas formed above the topsurface of the ILD layer 150 can be removed utilizing a planarizationprocess, such as CMP.

Although illustrative embodiments of the present invention have beendescribed herein with reference to the accompanying drawings, it is tobe understood that the invention is not limited to those preciseembodiments, and that various other changes and modifications may bemade by one skilled in the art without departing from the scope orspirit of the invention.

We claim:
 1. A method for manufacturing a semiconductor device,comprising: forming a stacked configuration of a plurality of firstsemiconductor layers and a plurality of second semiconductor layers on asemiconductor substrate, wherein: the stacked configuration comprises arepeating arrangement of a second semiconductor layer stacked on a firstsemiconductor layer; and a concentration of germanium is varied betweeneach of the plurality of first semiconductor layers; patterning thestacked configuration into a plurality of patterned stacks spaced apartfrom each other; etching exposed sides of the plurality of firstsemiconductor layers to remove portions of the first semiconductorlayers from lateral sides of each of the plurality of firstsemiconductor layers, wherein remaining portions of each of theplurality of first semiconductor layers have the same or substantiallythe same width as each other; selectively removing the remainingportions of each of the plurality of first semiconductor layers from theplurality of patterned stacks; and replacing the removed remainingportions of each of the plurality of first semiconductor layers withrespective gate structures.
 2. The method according to claim 1, whereineach of the respective gate structures has the same or substantially thesame width as each other.
 3. The method according to claim 1, whereinthe concentration of germanium in each of the plurality of firstsemiconductor layers increases from a top layer to a bottom layer of theplurality of first semiconductor layers in the stacked configuration. 4.The method according to claim 1, wherein the concentration of germaniumin a top layer of the plurality of first semiconductor layers in thestacked configuration is less than the concentration of germanium in abottom layer of the plurality of first semiconductor layers in thestacked configuration.
 5. The method according to claim 1, wherein theetching is performed using hydrochloric acid (HCl).
 6. The methodaccording to claim 5, wherein the etching is performed at a temperatureof about 400° C. to about 700° C.
 7. The method according to claim 1,further comprising filling vacant areas left by the removed portions ofthe first semiconductor layers from the lateral sides with a dielectric.8. The method according to claim 7, wherein the filling comprises:conformally depositing a dielectric liner layer on the plurality ofpatterned stacks and on the substrate; and removing portions of thedielectric liner layer outside of the vacant areas.
 9. The methodaccording to claim 8, further comprising growing a plurality ofepitaxial source/drain regions between the plurality of patternedstacks, wherein the epitaxial source/drain regions are grown fromexposed sides of the plurality of second semiconductor layers in theplurality of patterned stacks.
 10. The method according to claim 1,further comprising forming a plurality of dummy gates spaced apart fromeach other on the stacked configuration, wherein the plurality of dummygates cover a portion of the stacked configuration in a channel region.11. A method for manufacturing a semiconductor device, comprising:forming a stacked configuration of a plurality of first semiconductorlayers and a plurality of second semiconductor layers on a semiconductorsubstrate, wherein the stacked configuration comprises a repeatingarrangement of a second semiconductor layer stacked on a firstsemiconductor layer; patterning the stacked configuration into aplurality of patterned stacks spaced apart from each other; etchingexposed sides of the plurality of first semiconductor layers to removeportions of the first semiconductor layers from lateral sides of each ofthe plurality of first semiconductor layers; wherein a concentration ofat least one semiconductor material in the first semiconductor layers isvaried between each of the plurality of first semiconductor layers tocompensate for variations in etching rates between the plurality offirst semiconductor layers; and replacing the remaining portions of eachof the plurality of first semiconductor layers with respective gatestructures having the same or substantially the same width as eachother.
 12. The method according to claim 11, wherein the concentrationof the at least one semiconductor material in each of the plurality offirst semiconductor layers increases from a top layer to a bottom layerof the plurality of first semiconductor layers in the stackedconfiguration.
 13. The method according to claim 11, wherein theconcentration of the at least one semiconductor material in a top layerof the plurality of first semiconductor layers in the stackedconfiguration is less than the concentration of the at least onesemiconductor material in a bottom layer of the plurality of firstsemiconductor layers in the stacked configuration.
 14. A method formanufacturing a semiconductor device, comprising: forming a stackedconfiguration of a plurality of first semiconductor layers and aplurality of second semiconductor layers on a semiconductor substrate,wherein the stacked configuration comprises a repeating arrangement of asecond semiconductor layer stacked on a first semiconductor layer;patterning the stacked configuration into a plurality of patternedstacks spaced apart from each other; etching exposed sides of theplurality of first semiconductor layers to remove portions of the firstsemiconductor layers from lateral sides of each of the plurality offirst semiconductor layers; wherein a concentration of germanium isvaried between each of the plurality of first semiconductor layers tocompensate for variations in etching rates between the plurality offirst semiconductor layers to result in remaining portions of each ofthe plurality of first semiconductor layers having the same orsubstantially the same width as each other; and replacing the remainingportions of each of the plurality of first semiconductor layers withrespective gate structures having the same or substantially the samewidth as each other.
 15. The method according to claim 14, wherein theconcentration of germanium in each of the plurality of firstsemiconductor layers increases from a top layer to a bottom layer of theplurality of first semiconductor layers in the stacked configuration.16. The method according to claim 14, wherein the concentration ofgermanium in a top layer of the plurality of first semiconductor layersin the stacked configuration is less than the concentration of germaniumin a bottom layer of the plurality of first semiconductor layers in thestacked configuration.
 17. The method according to claim 14, wherein theetching is performed using hydrochloric acid (HCl).
 18. The methodaccording to claim 14, further comprising filling vacant areas left bythe removed portions of the first semiconductor layers from the lateralsides with a dielectric.
 19. The method according to claim 18, whereinthe filling comprises: conformally depositing a dielectric liner layeron the plurality of patterned stacks and on the substrate; and removingportions of the dielectric liner layer outside of the vacant areas. 20.The method according to claim 19, further comprising growing a pluralityof epitaxial source/drain regions between the plurality of patternedstacks, wherein the epitaxial source/drain regions are grown fromexposed sides of the plurality of second semiconductor layers in theplurality of patterned stacks.